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authorYunhong Jiang <yunhong.jiang@intel.com>2015-08-04 12:17:53 -0700
committerYunhong Jiang <yunhong.jiang@intel.com>2015-08-04 15:44:42 -0700
commit9ca8dbcc65cfc63d6f5ef3312a33184e1d726e00 (patch)
tree1c9cafbcd35f783a87880a10f85d1a060db1a563 /kernel/Documentation/mtd/nand
parent98260f3884f4a202f9ca5eabed40b1354c489b29 (diff)
Add the rt linux 4.1.3-rt3 as base
Import the rt linux 4.1.3-rt3 as OPNFV kvm base. It's from git://git.kernel.org/pub/scm/linux/kernel/git/rt/linux-rt-devel.git linux-4.1.y-rt and the base is: commit 0917f823c59692d751951bf5ea699a2d1e2f26a2 Author: Sebastian Andrzej Siewior <bigeasy@linutronix.de> Date: Sat Jul 25 12:13:34 2015 +0200 Prepare v4.1.3-rt3 Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de> We lose all the git history this way and it's not good. We should apply another opnfv project repo in future. Change-Id: I87543d81c9df70d99c5001fbdf646b202c19f423 Signed-off-by: Yunhong Jiang <yunhong.jiang@intel.com>
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+
+About this document
+===================
+
+Some notes about Marvell's NAND controller available in PXA and Armada 370/XP
+SoC (aka NFCv1 and NFCv2), with an emphasis on the latter.
+
+NFCv2 controller background
+===========================
+
+The controller has a 2176 bytes FIFO buffer. Therefore, in order to support
+larger pages, I/O operations on 4 KiB and 8 KiB pages is done with a set of
+chunked transfers.
+
+For instance, if we choose a 2048 data chunk and set "BCH" ECC (see below)
+we'll have this layout in the pages:
+
+ ------------------------------------------------------------------------------
+ | 2048B data | 32B spare | 30B ECC || 2048B data | 32B spare | 30B ECC | ... |
+ ------------------------------------------------------------------------------
+
+The driver reads the data and spare portions independently and builds an internal
+buffer with this layout (in the 4 KiB page case):
+
+ ------------------------------------------
+ | 4096B data | 64B spare |
+ ------------------------------------------
+
+Also, for the READOOB command the driver disables the ECC and reads a 'spare + ECC'
+OOB, one per chunk read.
+
+ -------------------------------------------------------------------
+ | 4096B data | 32B spare | 30B ECC | 32B spare | 30B ECC |
+ -------------------------------------------------------------------
+
+So, in order to achieve reading (for instance), we issue several READ0 commands
+(with some additional controller-specific magic) and read two chunks of 2080B
+(2048 data + 32 spare) each.
+The driver accommodates this data to expose the NAND core a contiguous buffer
+(4096 data + spare) or (4096 + spare + ECC + spare + ECC).
+
+ECC
+===
+
+The controller has built-in hardware ECC capabilities. In addition it is
+configurable between two modes: 1) Hamming, 2) BCH.
+
+Note that the actual BCH mode: BCH-4 or BCH-8 will depend on the way
+the controller is configured to transfer the data.
+
+In the BCH mode the ECC code will be calculated for each transferred chunk
+and expected to be located (when reading/programming) right after the spare
+bytes as the figure above shows.
+
+So, repeating the above scheme, a 2048B data chunk will be followed by 32B
+spare, and then the ECC controller will read/write the ECC code (30B in
+this case):
+
+ ------------------------------------
+ | 2048B data | 32B spare | 30B ECC |
+ ------------------------------------
+
+If the ECC mode is 'BCH' then the ECC is *always* 30 bytes long.
+If the ECC mode is 'Hamming' the ECC is 6 bytes long, for each 512B block.
+So in Hamming mode, a 2048B page will have a 24B ECC.
+
+Despite all of the above, the controller requires the driver to only read or
+write in multiples of 8-bytes, because the data buffer is 64-bits.
+
+OOB
+===
+
+Because of the above scheme, and because the "spare" OOB is really located in
+the middle of a page, spare OOB cannot be read or write independently of the
+data area. In other words, in order to read the OOB (aka READOOB), the entire
+page (aka READ0) has to be read.
+
+In the same sense, in order to write to the spare OOB the driver has to write
+an *entire* page.
+
+Factory bad blocks handling
+===========================
+
+Given the ECC BCH requires to layout the device's pages in a split
+data/OOB/data/OOB way, the controller has a view of the flash page that's
+different from the specified (aka the manufacturer's) view. In other words,
+
+Factory view:
+
+ -----------------------------------------------
+ | Data |x OOB |
+ -----------------------------------------------
+
+Driver's view:
+
+ -----------------------------------------------
+ | Data | OOB | Data x | OOB |
+ -----------------------------------------------
+
+It can be seen from the above, that the factory bad block marker must be
+searched within the 'data' region, and not in the usual OOB region.
+
+In addition, this means under regular usage the driver will write such
+position (since it belongs to the data region) and every used block is
+likely to be marked as bad.
+
+For this reason, marking the block as bad in the OOB is explicitly
+disabled by using the NAND_BBT_NO_OOB_BBM option in the driver. The rationale
+for this is that there's no point in marking a block as bad, because good
+blocks are also 'marked as bad' (in the OOB BBM sense) under normal usage.
+
+Instead, the driver relies on the bad block table alone, and should only perform
+the bad block scan on the very first time (when the device hasn't been used).